Fuse circuit, repair control circuit, and semiconductor apparatus including the same

ABSTRACT

A fuse circuit may include a plurality of first fuse sets and a plurality of second fuse sets. The plurality of first fuse sets may be used to store a defect address detected before packaging of a semiconductor apparatus. The plurality of second fuse sets may be used to store a defect address detected after the packaging. The plurality of first fuse sets may be shared by a plurality of first redundant word lines, and the plurality of second fuse sets may be in one-to-one correspondence with a plurality of second redundant word lines.

CROSS-REFERENCES TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. § 119(a) toKorean application number 10-2016-0129016 filed on Oct. 6, 2016, in theKorean Intellectual Property Office, which is incorporated herein byreference in its entirety.

BACKGROUND

1. Technical Field

Various embodiments generally relate to a semiconductor circuit, and,more particularly, to a fuse circuit, a repair control circuit, and asemiconductor apparatus including the same.

2. Related Art

In a semiconductor integrated circuit such as a semiconductor memory,defects may occur in memory cells and/or signal lines (e.g., word linesand bit lines) during or after a fabrication process.

In order to repair the defects, the semiconductor integrated circuit mayinclude a circuit that is used to replace defective memory cells withredundant memory cells. For example, rows or columns having defects maybe replaced with redundant rows or columns to replace defective memorycells with redundant memory cells.

Furthermore, the semiconductor circuit may include a post package repair(PPR) function, which involves repairing defective memory cells afterpackaging.

SUMMARY

In an embodiment of the present disclosure, a fuse circuit may include aplurality of first fuse sets and a plurality of second fuse sets. Theplurality of first fuse sets may be used to store a defect addressdetected before packaging of a semiconductor apparatus. The plurality ofsecond fuse sets may be used to store a defect address detected afterthe packaging. The plurality of first fuse sets may be shared by aplurality of first redundant word lines, and the plurality of secondfuse sets may be in one-to-one correspondence with a plurality of secondredundant word lines.

In an embodiment of the present disclosure, a repair control circuit mayinclude a fuse array, a fuse latch set array, and a repair determinationcircuit. The fuse array may include a plurality of first fuse sets and aplurality of second fuse sets. The plurality of first fuse sets may beshared by a plurality of first redundant word lines, and the pluralityof second fuse sets may be in one-to-one correspondence with a pluralityof second redundant word lines. The fuse latch set array may generate aplurality of flag signal sets indicating whether defect addresses readfrom the fuse array coincide with an address input from an externaldevice, during a boot-up operation of a semiconductor apparatus. Therepair determination circuit may generate a plurality of repairdetermination signals according to the plurality of flag signal sets,and may prevent a part of the repair determination signals from beingactivated, according to a normal repair blocking signal.

In an embodiment of the present disclosure, a semiconductor apparatusmay include a memory cell array and a repair control circuit. The memorycell array may include a plurality of normal word lines and a pluralityof redundant word lines for replacing the plurality of normal wordlines. The repair control circuit may include a fuse array having aplurality of first fuse sets and a plurality of second fuse sets. Thefirst fuse sets may be shared by a plurality of first redundant wordlines among the plurality of redundant word lines. The plurality ofsecond fuse sets may be in one-to-one correspondence with a plurality ofsecond redundant word lines. The repair control circuit may prevent arepair operation from being performed by the plurality of first fusesets, when a defect address stored in any one of the plurality of secondfuse sets coincides with a defect address stored in any one of theplurality of first fuse sets.

BRIEF DESCRIPTION OF THE DRAWINGS

Features, aspects, and embodiments are described in conjunction with theattached drawings, in which:

FIG. 1 is a diagram illustrating an example configuration of a memorysystem according to an embodiment;

FIG. 2 is a diagram illustrating an example configuration of asemiconductor memory of FIG. 1;

FIG. 3 is a diagram illustrating an example configuration of a memorycell array of FIG. 2;

FIG. 4 is a diagram illustrating an example configuration of a fusearray of FIG. 2;

FIG. 5 is a diagram illustrating an example configuration of a repaircontroller of FIG. 2;

FIG. 6 is a diagram illustrating an example configuration of fuse latchsets of FIG. 5;

FIG. 7 is a diagram illustrating an example configuration of a latch 400of FIG. 6;

FIGS. 8 to 10 are diagrams illustrating example configurations ofcomparators of FIG. 5; and

FIG. 11 is a diagram illustrating an example configuration of a normalrepair blocking signal generation circuit of FIG. 5.

DETAILED DESCRIPTION

Hereinafter, a fuse circuit, a repair control circuit and asemiconductor apparatus including the same according to the presentdisclosure will be described below with reference to the accompanyingdrawings through exemplary embodiments.

A memory system 100 according to an embodiment may be embodied in theform of a system-in-package module, multi-chip-package module, orsystem-on-chip module. Alternatively, the memory system 100 may beembodied in the form of a package-on-package module including aplurality of packages.

As illustrated in FIG. 1, the memory system 100 according to anembodiment may include a semiconductor memory 101, a memory controllerCPU or GPU, an interposer, and a package substrate. Here, thesemiconductor memory 101 may include a plurality of dies stackedtherein.

The semiconductor memory 101 may be configured in the form of a HighBandwidth Memory (HBM) in which a plurality of dies are stacked andelectrically coupled to each other through a plurality of through-holeelectrodes. The HBM may increase the number of input/output circuits,thereby raising a bandwidth.

The interposer may be coupled to a top portion of the package substrate.

The semiconductor memory 101 and the memory controller CPU or GPU may becoupled to a top portion of the interposer.

Physical regions PHY of the semiconductor memory 101 and the memorycontroller CPU or GPU may be coupled to each other through theinterposer.

The semiconductor memory 101 may include the plurality of stacked dies.

The plurality of stacked dies may include a base die and a plurality ofcore dies.

The base die and the plurality of core dies may be electrically coupledto each other through a plurality of through-hole electrodes (e.g., TSV:Through Silicon Via).

As illustrated in FIG. 2, the semiconductor memory 102, for example, atleast one of the base die and the plurality of core dies in FIG. 1 mayinclude a memory cell array 103, a decoder 104, a command/addressprocessing circuit 105, a fuse array 106, and a repair controller 107.

The decoder 104 may decode a row address and column address, and mayselect a word line and bit line of the memory cell array 103.

The command/address processing circuit 105 may decode a command/addresssignal C/A input from an external device, and may generate a commandrelated to a normal operation, such as a read command or a writecommand, or signals related to a boot-up operation and a repairoperation, such as a boot-up mode signal Boot and bank activeinformation BK0_ACT and BK1_ACT. Furthermore, the command/addressprocessing circuit 105 may provide a row address and a column addressrelated to a normal operation/repair operation to the decoder 104 or therepair controller 107.

The boot-up mode signal Boot may be activated during a boot-upoperation.

The bank active information BK0_ACT and BK1_ACT may include first bankactive information BK0_ACT defining an activation of a first memory bankBK0 and second bank active information BK1_ACT defining an activation ofa second memory bank BK1.

The fuse array 106 may include a plurality of fuses, and may storeaddresses of defective memory cells (hereinafter referred to as “defectaddress”), among memory cells of the memory cell array 103, on afuse-set by fuse-set basis.

The fuse array 106 may use a plurality of e-fuses in repairing thedefect addresses. The e-fuses may store information by performing aprogram operation even after packaging as well as at a wafer level.

The repair controller 107 may store a defect address detected before orafter packaging into the fuse array 106, according to a command (e.g.,repair command) generated by the command/address processing circuit 105.

In response to a command such as a boot-up command generated by thecommand/address processing circuit 105, the repair controller 107 mayread defect addresses stored in the fuse array 106, and may store theread addresses therein.

When an address input from an external device coincides with a defectaddress stored in the repair controller 107, the repair controller 107may perform a repair operation. For example, the repair controller 107may select a redundant word line instead of a normal word line of thememory cell array 103.

As illustrated in FIG. 3, the memory cell array 103 may include aplurality of unit memory blocks, for example, a plurality of memorybanks BK0 and BK1. Although only two memory banks are illustrated inFIG. 3, three or more memory banks may be present.

The plurality of memory banks BK0 and BK1 may be configured in the samemanner.

For example, the first memory bank BK0 may include a plurality of wordlines WL and RWL, a plurality of bit lines BL, and a plurality of memorycells MC coupled to the plurality of word lines WL and RWL and theplurality of bit lines BL.

Among the plurality of word lines WL and RWL, WL may represent normalword lines, and RWL may represent redundant word lines for replacingword lines WL corresponding to defect addresses among the plurality ofword lines WL.

As illustrated in FIG. 4, the fuse array 106 may include a plurality offuse sets FUSE SET_0 to FUSE SET_31.

Here, the plurality of fuse sets FUSE SET_0 to FUSE SET_31 maycorrespond to fuse sets allocated to a part of the memory cell array103.

The fuse sets FUSE SET_0 to FUSE SET_31 may be programmed with differentdefect addresses.

The plurality of fuse sets FUSE SET_0 to FUSE SET_31 may be divided intofirst fuse sets FUSE SET_8 to FUSE SET_31 and second fuse sets FUSESET_0 to FUSE SET_7. Hereafter, the first fuse sets will be referred toas normal repair fuse sets, and the second fuse sets will be referred toas PPR fuse sets. For example, the normal repair fuse sets may be fusesets that are used to replace defective memory cells before packaging.

The normal repair fuse sets FUSE SET_8 to FUSE SET_31 may be used tostore addresses of defective memory cells that have been found to bedefective before packaging, for example, during a wafer test process.

The program operation may include rupturing fuses of the fuse setsaccording to the addresses.

The PPR fuse sets FUSE SET_0 to FUSE SET_7 may be used to storeaddresses of defective memory cells that have occurred after packagingor have found to be defective after packaging.

The normal repair fuse sets FUSE SET_8 to FUSE SET_31 may be shared bythe first memory bank BK0 and the second memory bank BK1. That is, thenormal repair fuse sets FUSE SET_8 to FUSE SET_31 may be shared by aplurality of redundant word lines (e.g., four redundant word lines) forreplacing a plurality of normal word lines corresponding to differentaddresses.

For example, four redundant word lines (e.g., RWL0 to RWL3) may beallocated to the normal repair fuse set FUSE SET_31.

The normal repair fuse set FUSE SET_31 may store an address signalA<1:n> and an enable signal EN defining whether the corresponding fuseis used.

Here, since the normal repair fuse sets FUSE SET_8 to FUSE SET_31 areshared by the plurality of normal word lines, the least significantaddress bit A0 for distinguishing the plurality of normal word linesdoes not need to be programmed.

During a normal operation, when a defect address programmed in the fuseset FUSE SET_31 is any one of row addresses corresponding to four normalword lines (for convenience, WL0 to WL3), and when a row address inputfrom an external device coincides with the defect address programmed inthe normal repair fuse set FUSE SET_31, all of the word lines WL0 to WL3may be replaced with four redundant word lines RWL0 to RWL3corresponding thereto.

Unlike the normal repair fuse sets FUSE SET_8 to FUSE SET_31 which areshared by the plurality of normal word lines, the PPR fuse sets FUSESET_0 to FUSE SET_7 may be in one-to-one correspondence with redundantword lines.

The PPR fuse sets FUSE SET_0 to FUSE SET_7 may be divided into first PPRfuse sets FUSE SET_0 to FUSE SET_3 and second PPR fuse sets FUSE SET_4to FUSE SET_7.

The first PPR fuse sets FUSE SET_0 to FUSE SET_3 may be in one-to-onecorrespondence with redundant word lines (for convenience, RWLa to RWLd)for the first memory bank BK0.

The second PPR fuse sets FUSE SET_4 to FUSE SET_7 may be in one-to-onecorrespondence with redundant word lines (for convenience, RWLe to RWLh)for the second memory bank BK1.

The fuse set FUSE SET_0 may store an address signal A<0:n> and theenable signal EN defining whether the corresponding fuse is used.

Here, since the fuse sets FUSE SET_4 to FUSE SET_7 are in one-to-onecorrespondence with redundant word lines, the least significant addressbit A0 for distinguishing the redundant word lines may be programmed.

When a defect address programmed in the fuse set FUSE SET_0 is a rowaddress corresponding to a normal word line (for convenience, WL4) ofthe first memory bank BK0, and when a row address input from an externaldevice coincides with the defect address programmed in the fuse set FUSESET_0, the word line WL4 may be replaced with the correspondingredundant word line RWLa.

When a defect address programmed in the fuse set FUSE SET_4 is a rowaddress corresponding to a normal word line (for convenience, WL8096) ofthe second memory bank BK1, and when a row address input from anexternal device coincides with the defect address programmed in the fuseset FUSE SET_4, the word line WL8096 may be replaced with thecorresponding redundant word line RWLe.

As illustrated in FIG. 5, the repair controller 107 of FIG. 2 mayinclude a fuse latch set array 300, a repair determination circuit 500and a normal repair blocking signal generation circuit 900.

The fuse latch set array 300 may store defect addresses read from theplurality of fuse sets FUSE SET_0 to FUSE SET_31, during a boot-upoperation.

The fuse latch set array 300 may generate a plurality of flag signalsets Hit<8:31><1:n>/EN, Hit<4:7><0:n>/EN and Hit<0:3><0:n>/EN indicatingwhether defect addresses stored in the fuse latch set array 300 coincidewith an address input from an external device, during a normaloperation.

The fuse latch set array 300 may include a plurality of fuse latch setsFUSE LATCH SET_0 to FUSE LATCH SET_31.

The plurality of fuse latch sets FUSE LATCH SET_0 to FUSE LATCH SET_31may be in one-to-one correspondence with the plurality of fuse sets FUSESET_0 to FUSE SET_31 of FIG. 4.

Among the plurality of fuse latch sets LATCH SET_0 to FUSE LATCH SET_31,the fuse latch sets FUSE LATCH SET_8 to FUSE LATCH SET_31 may correspondto the normal repair fuse sets FUSE SET_8 to FUSE SET_31, the fuse latchsets FUSE LATCH SET_0 to FUSE LATCH SET_3 may correspond to the firstPPR fuse sets FUSE SET_0 to FUSE SET_3, and the fuse latch sets FUSELATCH SET_4 to FUSE LATCH SET_7 may correspond to the second PPR fusesets FUSE SET_4 to FUSE SET_7.

During a boot-up operation, the plurality of fuse latch sets FUSE LATCHSET_0 to FUSE LATCH SET_31 may store defect addresses read from theplurality of fuse sets FUSE SET_0 to FUSE SET_31.

The repair determination circuit 500 may generate a plurality of repairdetermination signals Hitb<0:31> according to the boot-up mode signalBoot, the first bank active information BK0_ACT, the second bank activeinformation BK1_ACT and the plurality of flag signal setsHit<8:31><1:n>/EN, Hit<4:7><0:n>/EN and Hit<0:3><0:n>/EN.

The repair determination circuit 500 may prevent some of the repairdetermination signals Hitb<0:31> from being activated when a normalrepair blocking signal Hitb_dis is activated. For example, the repairdetermination circuit 500 may prevent the repair determination signalsHitb<8:31> from being activated when a normal repair blocking signalHitb_dis is activated.

The repair determination circuit 500 may include a plurality ofcomparators CMP_0 to CMP_31.

Among the plurality of comparators CMP_0 to CMP_31, a plurality of firstcomparators CMP_8 to CMP_31 may generate first repair determinationsignals Hitb<8:31> among the plurality of repair determination signalsHitb<0:31>, according to a plurality of first flag signal setsHit<8:31><1:n>/EN among the plurality of flag signal setsHit<8:31><1:n>/EN, Hit<4:7><0:n>/EN and Hit<0:3><0:n>/EN.

The plurality of first comparators CMP_8 to CMP_31 may be configured inthe same manner.

Among the plurality of comparators CMP_0 to CMP_31, the plurality offirst comparators CMP_8 to CMP_31 may prevent the first repairdetermination signals Hitb<8:31> from being activated when the normalrepair blocking signal Hitb_dis is activated.

By using the normal repair blocking signal Hitb_dis, repair operationsby the fuse latch sets FUSE LATCH SET_0 to FUSE LATCH SET_7 storingdefect addresses of the PPR fuse sets FUSE SET_0 to FUSE SET_7 may havepriority over repair operations by the fuse latch sets FUSE LATCH SET_8to FUSE LATCH SET_31 storing defect addresses of the normal repair fusesets FUSE SET_8 to FUSE SET_31.

For example, when a defect is detected in a redundant word linecorresponding to a row address stored in any one of the fuse latch setsFUSE LATCH SET_8 to FUSE LATCH SET_31, the corresponding address may beprogrammed to any one of the PPR fuse sets FUSE SET_0 to FUSE SET_7.

In this case, the repair determination signals Hitb<8> and Hitb<0> maybe activated at the same time by fuse latch sets storing the same rowaddress, for example, the fuse latch sets FUSE LATCH SET_8 and FUSELATCH SET_0.

Thus, by using the normal repair blocking signal Hitb_dis, the repairdetermination circuit 500 may prevent the repair determination signalHitb<8> from being activated by the fuse latch set FUSE LATCH SET_8, sothat the repair determination signal Hitb<0> has priority over therepair determination signal Hitb<8>.

Among the plurality of comparators CMP_0 to CMP_31, the plurality ofsecond comparators CMP_0 to CMP_3 may generate second repairdetermination signals Hitb<0:3> among the plurality of repairdetermination signals Hitb<0:31>, according to the boot-up mode signalBoot, the first bank active information BK0_ACT and a plurality ofsecond flag signal sets Hit<0:3><1:n>/EN among the plurality of flagsignal sets Hit<8:31><1:n>/EN, Hit<4:7><0:n>/EN and Hit<0:3><0:n>/EN.

The plurality of second comparators CMP_0 to CMP_3 may be configured inthe same manner.

Among the plurality of comparators CMP_0 to CMP_31, the plurality ofthird comparators CMP_4 to CMP_7 may generate third repair determinationsignals Hitb<4:7> among the plurality of repair determination signalsHitb<0:31>, according to the boot-up mode signal Boot, the second bankactive information BK1_ACT and a plurality of third flag signal setsHit<4:7><1:n>/EN among the plurality of flag signal setsHit<8:31><1:n>/EN, Hit<4:7><0:n>/EN and Hit<0:3><0:n>/EN.

The plurality of third comparators CMP_4 to CMP_7 may be configured inthe same manner.

The normal repair blocking signal generation circuit 900 may generatethe normal repair blocking signal Hitb_dis according to the boot-up modesignal Boot and the repair determination signals Hitb<0:7> among theplurality of repair determination signals Hitb<0:31>.

As illustrated in FIG. 6, the fuse latch sets FUSE LATCH SET_8 to FUSELATCH SET_31 may be configured in the same manner. For example, the fuselatch set FUSE LATCH SET_31 may include a plurality of latches 400.

The plurality of latches 400 of the fuse latch set FUSE LATCH SET_31 maystore the respective bits of the enable signal EN and the address signalA<1:n>, which are output from the fuse set FUSE SET_31.

As described above, the fuse latch sets FUSE LATCH SET_8 to FUSE LATCHSET_31 may be in one-to-one correspondence with the normal repair fusesets FUSE SET_8 to FUSE SET_31 shared by the plurality of normal wordlines. Thus, the fuse latch sets FUSE LATCH SET_8 to FUSE LATCH SET_31do not need to store the least significant address bit A0 fordistinguishing the plurality of normal word lines.

The fuse latch sets FUSE LATCH SET_0 to FUSE LATCH SET_7 may beconfigured in the same manner. For example, the fuse latch set FUSELATCH SET_0 may include a plurality of latches 401.

The plurality of latches 401 of the fuse latch set FUSE LATCH SET_0 maystore the respective bits of the enable signal EN and the address signalA<1:n>, which are output from the fuse set FUSE SET_0.

As described above, the fuse latch sets FUSE LATCH SET_0 to FUSE LATCHSET_7 may be in one-to-one correspondence with the PPR fuse sets FUSESET_0 to FUSE SET_7, which are in one-to-one correspondence with theredundant word lines of the corresponding memory bank. Thus, the fuselatch sets FUSE LATCH SET_0 to FUSE LATCH SET_7 may store the leastsignificant address bit A0 for distinguishing the plurality of normalword lines.

The plurality of latches 400 and 401 may be configured in the samemanner.

As illustrated in FIG. 7, the latch 400 may include a plurality of logicgates 411 to 419.

During a boot-up operation, in response to a fuse select signal FSEL<i>activated to a high level, the latch 400 may receive, as an input signalIN<i>, any one of the enable signal EN and the address signal A<1:n>output from the fuse set FUSE_SET_31 and store the input signal IN<i> ina node Node_A.

Then, during a normal operation, the latch 400 may receive one bit of arow address input from an external device as an input signal IN<i>, andactivate a flag signal Hit<i> to a high level when the level of thesignal stored in the node Node_A coincides with the level of the one bitof the row address.

For example, since the fuse select signal FSEL<i> is at a high levelduring the boot-up operation, the logic gate 412 may be turned on. Whenthe input signal IN<i> is at a high level, a high level may be stored inthe node Node_A through the logic gate 412.

Then, since the fuse select signal FSEL<i> is at a low level during thenormal operation, the logic gate 412 may be turned off. Since the nodeNode_A is at a high level, the logic gate 417 may be turned on. When theinput signal IN<i> is at a high level, the flag signal Hit<i> may beactivated to a high level through the logic gates 415 and 417.

Since the node Node_A is at the high level as a result of the boot-upoperation, the logic gate 417 may stay turned on. Then, since the fuseselect signal FSEL<i> is at a low level during the normal operation, thelogic gates 412 and 415 may be turned off. When the input signal IN<i>is at a low level, the flag signal Hit<i> may be deactivated to a lowlevel through the logic gates 415 and 417.

For another example, since the fuse select signal FSEL<i> is at a highlevel during a boot-up operation, the logic gate 412 may be turned on.When the input signal IN<i> is at a low level, a low level may be storedin the node Node_A through the logic gate 412.

Then, since the fuse select signal FSEL<i> is at a low level during anormal operation, the logic gate 412 may be turned off. Since the nodeNode_A is at a low level, the logic gate 417 may be turned off, and thelogic gate 418 may be turned on. When the input signal IN<i> is at a lowlevel, the flag signal Hit<i> may be activated to a high level throughthe logic gates 416 and 418.

Since the node Node_A is at the low level as a result of the boot-upoperation, the logic gate 418 may stay turned on. Then, since the fuseselect signal FSEL<i> is at a low level during the normal operation, thelogic gates 412 and 415 may be turned off. When the input signal IN<i>is at a high level, the flag signal Hit<i> may be deactivated to a lowlevel through the logic gates 416 and 418.

As illustrated in FIG. 8, the comparator CMP_31 of FIG. 4 may include aplurality of logic gates 511, 513, 515, and 517.

The logic gates 511 may perform a NAND operation on the flag signal setHit<31><1:n> and output the result of the NAND operation.

The logic gates 511 may generate a low-level output when the flag signalset Hit<31><1:n> is all activated to a high level.

The logic gates 513 may be coupled between a supply voltage terminal anda ground voltage terminal, and may set the node Node_B to a high levelwhen the outputs of the logic gates 511 are all at a low level.

The logic gates 515 may set the node Node_B to a low level when any oneof the outputs of the logic gates 511 is at a high level.

The logic gate 517 may perform a NAND operation on the level of the nodeNode_B, the enable signal EN, and the normal repair blocking signalHitb_dis, and may output the result of the NAND operation as the repairdetermination signal Hitb<31>.

The comparator CMP_31 may activate the repair determination signalHitb<31> to a low level only when the flag signal set Hit<31><1:n> isall activated to a high level, the enable signal EN is activated to ahigh level, and the normal repair blocking signal Hitb_dis isdeactivated to a high level.

When the normal repair blocking signal Hitb_dis is activated to a lowlevel, the comparator CMP_31 may deactivate the repair determinationsignal Hitb<31> to a high level, regardless of the other input signals.

As illustrated in FIG. 9, the comparator CMP_0 of FIG. 4 may include aplurality of logic gates 521, 523, 525, 527, 528, and 529.

The logic gates 521 may perform a NAND operation on the flag signal setHit<0><0:n> and output the result of the NAND operation.

The logic gates 521 may generate a low-level output when the flag signalset Hit<0><0:n> is all activated to a high level.

The logic gates 523 may be coupled between a supply voltage terminal anda ground voltage terminal, and may set a node Node_C to a high levelwhen the outputs of the logic gates 521 are all at a low level.

The logic gates 525 may set the node Node_C to a low level when any oneof the outputs of the logic gates 521 is at a high level.

The logic gates 527 and 528 may perform an OR operation on the boot-upmode signal Boot and the first bank active information BK0_ACT, and mayoutput the result of the OR operation.

The logic gate 529 may perform a NAND operation on the level of the nodeNode_C, the enable signal EN, and the output of the logic gate 528, andmay output the result of the NAND operation as the repair determinationsignal Hitb<0>.

The comparator CMP_0 may activate the repair determination signalHitb<0> to a low level only when the flag signal set Hit<0><0:n> is allactivated to a high level, the enable signal EN is activated to a highlevel, and any one of the boot-up mode signal Boot and the first bankactive information BK0_ACT is activated.

When the boot-up mode signal Boot and the first bank active informationBK0_ACT are all deactivated to a low level, the comparator CMP_31 maydeactivate the repair determination signal Hitb<0> to a high levelregardless of the other input signals.

That is, where the semiconductor memory is not in the boot-up mode, thecomparator CMP_31 may prevent the repair determination signal Hitb<0>from being activated to a low level when the first memory bank BK0 isnot enabled.

As illustrated in FIG. 10, the comparator CMP_7 of FIG. 4 may include aplurality of logic gates 531, 533, 535, 537, 538, and 539.

The logic gates 531 may perform a NAND operation on the flag signal setHit<7><0:n> and output the result of the NAND operation.

The logic gates 531 may generate a low-level output when the flag signalset Hit<7><0:n> is all activated to a high level.

The logic gates 533 may be coupled between a supply voltage terminal anda ground voltage terminal, and may set a node Node_D to a high levelwhen the outputs of the logic gates 531 are all at a low level.

The logic gates 535 may set the node Node_D to a low level when any oneof the outputs of the logic gates 531 is at a high level.

The logic gates 537 and 538 may perform an OR operation on the boot-upmode signal Boot and the second bank active information BK1_ACT, and mayoutput the operation result.

The logic gate 539 may perform a NAND operation on the level of the nodeNode_D, the enable signal EN, and the output of the logic gate 538, andmay output the result of the NAND operation as the repair determinationsignal Hitb<7>.

The comparator CMP_7 may activate the repair determination signalHitb<7> to a low level only when the flag signal set Hit<7><0:n> is allactivated to a high level, the enable signal EN is activated to a highlevel, and any one of the boot-up mode signal Boot and the second bankactive information BK1_ACT is activated.

When the boot-up mode signal Boot and the second bank active informationBK1_ACT are all deactivated to a low level, the comparator CMP_7 maydeactivate the repair determination signal Hitb<7> to a high levelregardless of the other input signals.

That is, where the semiconductor memory is not in the boot-up mode, thecomparator CMP_7 may prevent the repair determination signal Hitb<7>from being activated to a low level when the second memory bank BK1 isnot enabled.

As illustrated in FIG. 11, the normal repair blocking signal generationcircuit 900 may include a plurality of logic gates 911, 913, 915, and917.

The logic gates 911 may perform a NAND operation on the repairdetermination signals Hitb<0:7>, and may output the result of the NANDoperation.

The logic gate 913 may perform a NOR operation on the outputs of thelogic gates 911, and may output the result of the NOR operation.

The logic gates 915 and 917 may perform an OR operation on the output ofthe logic gate 913 and the boot-up mode signal Boot, and may output theresult of the OR operation as the normal repair blocking signalHitb_dis.

The normal repair blocking signal generation circuit 900 may activatethe normal repair blocking signal Hitb_dis when any one of the repairdetermination signals Hitb<0:7>, which are generated by the fuse latchsets FUSE LATCH SET_0 to FUSE LATCH SET_7 storing the defect addressesof the PPR fuse sets FUSE SET_0 to FUSE SET_7, is activated.

While certain embodiments have been described above, it will beunderstood to those skilled in the art that the embodiments describedare by way of example only. Accordingly, the semiconductor apparatusdescribed herein should not be limited based on the describedembodiments. Rather, the semiconductor apparatus described herein shouldonly be limited in light of the claims that follow when taken inconjunction with the above description and accompanying drawings.

What is claimed is:
 1. A fuse circuit comprising: a plurality of firstfuse sets for programming a defect address detected before packaging ofa semiconductor apparatus; and a plurality of second fuse sets forprogramming a defect address detected after the packaging, wherein theplurality of first fuse sets are shared by a plurality of firstredundant word lines of memory banks, a part of the plurality of secondfuse sets are in one-to-one correspondence with a plurality of secondredundant word lines of each of the memory banks, respectively, andwherein the plurality of first fuse sets are included in a die of thesemiconductor apparatus.
 2. The fuse circuit according to claim 1,wherein all signal bits of the defect address, excluding the leastsignificant bit, are programmed to the plurality of first fuse sets. 3.The fuse circuit according to claim 2, wherein all signal bits of thedefect address are programmed to the plurality of second fuse sets. 4.The fuse circuit according to claim 1, wherein the second fuse sets aredivided into first and second groups, and wherein second fuse setsbelonging to the first group are in one-to-one correspondence with apart of the plurality of second redundant word lines positioned in afirst memory bank of the memory bank, and second fuse sets belonging tothe second group are in one-to-one correspondence with a rest of theplurality of second redundant word lines positioned in a second memorybank of the memory bank.
 5. A repair control circuit comprising: a fusearray comprising a plurality of first fuse sets and a plurality ofsecond fuse sets, the plurality of first fuse sets being shared by aplurality of first redundant word lines of memory banks, the pluralityof second fuse sets being in one-to-one correspondence with a pluralityof second redundant word lines of each of the memory banks,respectively; a fuse latch set array configured to generate a pluralityof flag signal sets indicating whether defect addresses read from thefuse array coincide with an address input from an external device,during a boot-up operation of a semiconductor apparatus; and a repairdetermination circuit configured to generate a plurality of repairdetermination signals according to the plurality of flag signal sets,and prevent a part of the repair determination signals from beingactivated, according to a normal repair blocking signal, wherein thefuse array is included in a die of a semiconductor apparatus.
 6. Therepair control circuit according to claim 5, further comprising a normalrepair blocking signal generation circuit configured to generate thenormal repair blocking signal according to the plurality of repairdetermination signals.
 7. The repair control circuit according to claim6, wherein when any one signal generated by the second fuse sets, amongthe plurality of repair determination signals, is activated, the normalrepair blocking signal generation circuit activates the normal repairblocking signal.
 8. The repair control circuit according to claim 5,wherein all signal bits of the defect address, excluding the leastsignificant bit, are programmed to the plurality of first fuse sets. 9.The repair control circuit according to claim 5, wherein all signal bitsof the defect address are programmed to the plurality of second fusesets.
 10. The repair control circuit according to claim 5, wherein thesecond fuse sets are divided into first and second groups, and whereinsecond fuse sets belonging to the first group are in one-to-onecorrespondence with a part of the plurality of second redundant wordlines positioned in a first memory bank of the memory banks, and secondfuse sets belonging to the second group are in one-to-one correspondencewith a rest of the plurality of second redundant word lines positionedin a second memory bank of the memory banks.
 11. The repair controlcircuit according to claim 5, wherein the repair determination circuitgenerates the plurality of repair determination signals according to aboot-up mode signal, bank active information, and the plurality of flagsignal sets.
 12. The repair control circuit according to claim 5,wherein, when a defect address stored in any one of the plurality ofsecond fuse sets coincides with a defect address stored in any one ofthe plurality of first fuse sets, the repair determination circuitprevents a repair determination signal corresponding to any one of theplurality of first fuse sets, among the plurality of repairdetermination signals, from being activated.
 13. The repair controlcircuit according to claim 5, wherein the repair determination circuitcomprises: a plurality of first comparators configured to generate firstrepair determination signals, among the plurality of repairdetermination signals, according to a plurality of first flag signalsets, among the plurality of flag signal sets, and prevents the firstrepair determination signals from being activated, according to thenormal repair blocking signal; a plurality of second comparatorsconfigured to generate second repair determination signals, among theplurality of repair determination signals, according to a plurality ofsecond flag signal sets, among the plurality of flag signal sets, aboot-up mode signal, and first bank active information; and a pluralityof third comparators configured to generate third repair determinationsignals, among the plurality of repair determination signals, accordingto a plurality of third flag signal sets, among the plurality of flagsignal sets, the boot-up mode signal, and second bank activeinformation.
 14. A semiconductor apparatus comprising: a memory cellarray, includes memory banks, comprising a plurality of normal wordlines and a plurality of redundant word lines for replacing theplurality of normal word lines; and a repair control circuit comprisinga fuse array having a plurality of first fuse sets and a plurality ofsecond fuse sets, the first fuse sets being shared by a plurality offirst redundant word lines among the plurality of redundant word linesof the memory banks, the second fuse sets being in one-to-onecorrespondence with a plurality of second redundant word lines of eachof the memory banks, respectively, wherein the repair control circuit isconfigured to prevent a repair operation from being performed by theplurality of first fuse sets, when a defect address stored in any one ofthe plurality of second fuse sets coincides with a defect address storedin any one of the plurality of first fuse sets, and wherein the fusearray is included a die of the semiconductor apparatus.
 15. Thesemiconductor apparatus according to claim 14, wherein the repaircontrol circuit comprises: a fuse latch set array configured to generatea plurality of flag signal sets indicating whether defect addresses readfrom the fuse array coincide with an address inputted from outside,during a boot-up operation of a semiconductor apparatus; and a repairdetermination circuit configured to generate a plurality of repairdetermination signals according to the plurality of flag signal sets,and prevent a part of the repair determination signals from beingactivated, according to a normal repair blocking signal.
 16. Thesemiconductor apparatus according to claim 15, further comprising anormal repair blocking signal generation circuit configured to activatethe normal repair blocking signal when any one signal generated by theplurality of second fuse sets, among the plurality of repairdetermination signals, is activated.
 17. The semiconductor apparatusaccording to claim 15, wherein the repair determination circuitcomprises: a plurality of first comparators configured to generate firstrepair determination signals, among the plurality of repairdetermination signals, according to a plurality of first flag signalsets among the plurality of flag signal sets, and prevents the firstrepair determination signals from being activated, according to thenormal repair blocking signal; a plurality of second comparatorsconfigured to generate second repair determination signals, among theplurality of repair determination signals, according to a plurality ofsecond flag signal sets, among the plurality of flag signal sets, aboot-up mode signal, and first bank active information defining anactivation of a first memory bank of the memory banks; and a pluralityof third comparators configured to generate third repair determinationsignals, among the plurality of repair determination signals, accordingto a plurality of third flag signal sets, among the plurality of flagsignal sets, the boot-up mode signal, and second bank active informationdefining an activation of a second memory bank of the memory banks. 18.The semiconductor apparatus according to claim 14, wherein all signalbits of the defect address, excluding the least significant bit, areprogrammed to the plurality of first fuse sets.
 19. The semiconductorapparatus according to claim 14, wherein all signal bits of the defectaddress are programmed to the plurality of second fuse sets.
 20. Thesemiconductor apparatus according to claim 14, wherein the second fusesets are divided into first and second groups, and wherein second fusesets belonging to the first group are in one-to-one correspondence witha part of the plurality of second redundant word lines positioned in afirst memory bank of the memory banks, and second fuse sets belonging tothe second group are in one-to-one correspondence with a rest of theplurality of second redundant word lines positioned in a second memorybank of the memory banks.